Ballistic charge transport in chiral-symmetric few-layer graphene

TL;DR

This paper develops a transfer matrix approach to analyze ballistic charge transport in chiral-symmetric few-layer graphene, revealing that zero-energy transport properties are equivalent to uncoupled monolayers and providing testable predictions for conductance and noise.

Contribution

It introduces a non-Abelian gauge transformation framework for chiral-symmetric multilayer graphene, simplifying the analysis of zero-energy transport and disorder effects.

Findings

Zero-energy transport in multilayer graphene is equivalent to uncoupled monolayers.

The gauge transformation can remove effects of magnetic field, strain, and disorder.

Predicted gate-voltage dependence of conductance and noise is experimentally measurable.

Abstract

A transfer matrix approach to study ballistic charge transport in few-layer graphene with chiral-symmetric stacking configurations is developed. We demonstrate that the chiral symmetry justifies a non-Abelian gauge transformation at the spectral degeneracy point (zero energy). This transformation proves the equivalence of zero-energy transport properties of the multilayer to those of the system of uncoupled monolayers. Similar transformation can be applied in order to gauge away an arbitrary magnetic field, weak strain, and hopping disorder in the bulk of the sample. Finally, we calculate the full-counting statistics at arbitrary energy for different stacking configurations. The predicted gate-voltage dependence of conductance and noise can be measured in clean multilayer samples with generic metallic leads.