Resistance fluctuations and 1/f noise in single crystalline Ni nanowires
Sudeshna Samanta, M. Venkata Kamalakar, A. K. Raychaudhuri

TL;DR
This study investigates resistance fluctuations and 1/f noise in single crystalline Ni nanowires, revealing magnetic contributions linked to thermally activated domain wall fluctuations affecting low-frequency noise.
Contribution
It provides new insights into magnetic-origin noise in ferromagnetic nanowires and links resistance fluctuations to domain wall dynamics.
Findings
1/f noise is partly magnetic in origin.
Magnetic noise decreases with increasing magnetic field.
Resistance fluctuations are influenced by thermally activated domain walls.
Abstract
We measured the low frequency (10mHz < f < 10Hz) resistance fluctuations (Noise) in single crystalline ferromagnetic Ni nanowires (diameter ~35nm) in the temperature range 80K-300K. The noise spectral power shows 1/f dependence. The nanowires in an applied magnetic field show negative magetoresistance that saturates for H <= HC. The noise spectral power shows a reduction in low applied field and becomes field independent for H >= HC. This indicates that a part of the observed 1/f noise arises from magnetic origin. The magnetic part is associated with thermally activated domain wall fluctuations that couples to the resistance fluctuations.
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Taxonomy
TopicsSurface and Thin Film Phenomena · Graphene research and applications · Semiconductor materials and interfaces
