Multiferroic oxides-based flash-memory and spin-field-effect transistor

TL;DR

This paper introduces a novel spin-field-effect transistor and flash-memory device based on multiferroic oxides, leveraging their magnetic and electric properties to control spin transport and memory functionalities.

Contribution

It proposes a modified spin-field-effect transistor using multiferroic oxides with a transverse helical magnetic order, enabling electric control of spin precession and memory functions.

Findings

Suppressed spin polarization dephasing enhances device performance.

Spin precession phase depends linearly on magnetic spiral helicity.

Electric control of magnetic helicity via magneto-electric effect is demonstrated.

Abstract

We propose a modified spin-field-effect transistor fabricated in a two dimensional electron gas (2DEG) formed at the surface of multiferroic oxides with a transverse helical magnetic order. The topology of the oxide local magnetic moments induces a resonant momentum-dependent effective spin-orbit interaction acting on 2DEG. We show that spin polarization dephasing is strongly suppressed which is crucial for functionality. The carrier spin precession phase depend linearly on the magnetic spiral helicity. The latter is electrically controllable by virtue of the magento-electric effect. We also suggest a flash-memory device based on this structure.