Pinning and switching of magnetic moments in bilayer graphene

TL;DR

This paper investigates how lattice vacancies in bilayer graphene can induce localized magnetic states and demonstrates that gate voltages can switch these states between unpolarized and fully polarized configurations.

Contribution

It presents a theoretical study showing magnetic switching in bilayer graphene due to vacancy-induced states under realistic conditions.

Findings

Magnetic states can be controlled by gate voltages.

Switching between unpolarized and polarized states is achievable.

Localized magnetic moments are induced by lattice vacancies.

Abstract

We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree-Fock calculation. We show that with realistic values of the parameters and for experimentally accessible gate voltages we can have a magnetic switching between an unpolarized and a fully polarized system.