A site-controlled quantum dot system offering both high uniformity and spectral purity

TL;DR

This paper presents a site-controlled quantum dot system with exceptionally high uniformity and spectral purity, achieved through precise growth techniques, enabling improved optical properties for quantum applications.

Contribution

The study demonstrates a novel site-controlled InGaAs quantum dot system with record-low inhomogeneous broadening and high spectral purity, surpassing previous site-controlled quantum dot systems.

Findings

Inhomogeneous broadening of 1.19 meV standard deviation

Spectral purity of emission lines between 18-30 ueV

High uniformity and spectral quality in site-controlled quantum dots

Abstract

In this paper we report on the optical properties of site controlled InGaAs dots with GaAs barriers grown in pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV, and spectral purity of emission lines from individual dots is found to be very high (18-30 ueV), in contrast with other site-controlled systems.