Universality and the zero-bias conductance of the single-electron transistor
M. Yoshida, A. C. Seridonio, L. N. Oliveira

TL;DR
This paper investigates the thermal behavior of the single-electron transistor's conductance in the Kondo regime, establishing a universal mapping to the Anderson model and supporting it with numerical results.
Contribution
It introduces an exact universal mapping for the SET conductance in the Kondo regime, linking it to the Anderson model and validated by numerical renormalization-group calculations.
Findings
Universal conductance curve established
Mapping parametrized by Kondo temperature and charge
Numerical results confirm the theoretical mapping
Abstract
The thermal dependence of the electrical conductance of the single-electron transistor (SET) in the zero-bias Kondo regime is discussed. An exact mapping to the universal curve for the symmetric Anderson model is established. Linear, the mapping is parametrized by the Kondo temperature and the charge in the Kondo cloud. Illustrative numerical renormalization-group results, in excellent agreement with the mapping, are presented.
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