Carbon nanotubes on partially depassivated n-doped Si(100)-(2x1):H substrates

TL;DR

This study investigates the mechanical and electronic interactions of semiconducting carbon nanotubes on partially depassivated silicon substrates, revealing local interface functionalities through experimental and theoretical analysis.

Contribution

It provides new insights into the local mechanical distortion and doping effects of carbon nanotubes on partially depassivated silicon surfaces, combining experimental STM data with DFT calculations.

Findings

Mechanical distortion observed in nanotubes on depassivated silicon.

Doping effects identified in nanotubes supported on specific substrate regions.

Potential for novel local functionalities at nanotube-semiconductor interfaces.

Abstract

We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room-temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si(100)-(2x1):H with hydrogen-depassivated stripes up to 100 Angstrom wide are ascertained from both experiment and theory. The results presented here point towards novel and local functionalities of nanotube-semiconductor interfaces.