4f-derived Fermi Surfaces of CeRu2(Si[1-x]Ge[x])2 near the Quantum Critical Point: Resonant Soft X-ray ARPES Study

TL;DR

This study uses resonant soft X-ray ARPES to examine how 4f-derived Fermi surfaces evolve near the quantum critical point in CeRu2(Si[1-x]Ge[x])2, revealing delocalized 4f electrons and supporting SDW quantum criticality.

Contribution

It provides direct experimental evidence of 4f electron behavior and Fermi surface changes across the quantum critical point in CeRu2(Si[1-x]Ge[x])2.

Findings

Confirmed difference in Fermi surfaces between CeRu2Si2 and LaRu2Si2.

Observed strong 4f-electron character in CeRu2Si2 and CeRu2(Si0.82Ge0.18)2.

No Fermi surface reconstruction across the critical composition.

Abstract

Angle-resolved photoelectron spectroscopy in the Ce 3d-4f excitation region was measured for the paramagnetic state of CeRu2Si2, CeRu2(Si0.82Ge0.18)2, and LaRu2Si2 to investigate the changes of the 4$f$ electron Fermi surfaces around the quantum critical point. While the difference of the Fermi surfaces between CeRu2Si2 and LaRu2Si2 was experimentally confirmed, a strong 4f-electron character was observed in the band structures and the Fermi surfaces of CeRu2Si2 and CeRu2(Si0.82Ge0.18)2, consequently indicating a delocalized nature of the 4$f$ electrons in both compounds. The absence of Fermi surface reconstruction across the critical composition suggests that SDW quantum criticality is more appropriate than local quantum criticality in CeRu2(Si[1-x]Ge[x])2.