Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

TL;DR

This study investigates how low-temperature electrical resistivity in Yb(Rh1-xCox)2Si2 single crystals varies with Co substitution, revealing effects on antiferromagnetism and non-Fermi liquid behavior.

Contribution

It provides new insights into how Co substitution influences magnetic transitions and electronic behavior in YbRh2Si2-based compounds.

Findings

Antiferromagnetic transition temperature increases with Co content.

A low-temperature transition appears at x=0.07 Co.

Resistivity exhibits non-Fermi liquid behavior above Neel temperature.

Abstract

We report low-temperature measurements of the electrical resistivity of Yb(Rh1-xCox)2Si2 single crystals with 0 <= x <= 0.12. The isoelectronic substitution of Co on the Rh site leads to a decrease of the unit cell volume which stabilizes the antiferromagnetism. Consequently, the antiferromagnetic transition temperature increases upon Co substitution. For x = 0.07 Co content a subsequent low-temperature transition is observed in agreement with susceptibility measurements and results on YbRh2Si2 under hydrostatic pressure. Above the Neel transition the resistivity follows a non-Fermi liquid behavior similar to that of YbRh2Si2.