Thermal properties of AlN-based atom chips
Julien Armijo (LCFIO), Carlos Garrido Alzar (LCFIO), Isabelle, Bouchoule (LCFIO)

TL;DR
This study investigates the thermal behavior of AlN-based atom chips with gold microwires, providing models and criteria for optimizing chip design and maximum current capacity.
Contribution
It introduces a theoretical model for thermal properties of AlN atom chips and offers analytical formulas for transient and steady-state heating regimes.
Findings
Good agreement between experimental results and the theoretical model.
Maximum current of 16 A for specific wire dimensions on a 600 μm thick chip.
Criteria for optimizing chip design and thermal management.
Abstract
We have studied the thermal properties of atom chips consisting o high thermal conductivity Aluminum Nitride (AlN) substrates on which gold microwires are directly deposited. We have measured the heating of wires of several widths and with different thermal couplings to the copper mount holding the chip. The results are in good agreement with a theoretical model where the copper mount is treated as a heat sink and the thermal interface resistance between the wire and the substrate is vanishing. We give analytical formulas describing the different transient heating regimes and the steady state. We identify criteria to optimize the design of a chip as well as the maximal currents that can be fed in the wires. For a 600 m thick-chip glued on a copper block with Epotek H77, we find A for a 3 m high, 200 m wide-wire.
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