Doping dependence of the chemical potential and surface electronic structure in YBa2Cu3O6+x and La2-xSrxCuO4 using hard x-ray photoemission spectroscopy
Kalobaran Maiti, Jorg Fink, Sanne de Jong, Mihaela Gorgoi, Chengtian, Lin, Markus Raichle, Vladimir Hinkov, Michael Lambacher, Andreas Erb, Mark S., Golden

TL;DR
This study uses hard x-ray photoemission spectroscopy to analyze how doping affects the chemical potential and surface electronic structure in YBa2Cu3O6+x and La2-xSrxCuO4, revealing distinct doping behaviors and challenging existing theoretical models.
Contribution
It provides new experimental insights into the doping dependence of the chemical potential and surface electronic structure in two high-temperature cuprate superconductors.
Findings
Chemical potential shifts differ between YBa2Cu3O6+x and La2-xSrxCuO4.
Strong chemical potential shift at low doping in YBa2Cu3O6+x.
Large variation in inverse charge susceptibility among doped cuprates.
Abstract
The electronic structure of YBa2Cu3O6+x and La2-xSrxCuO4 for various values of x has been investigated using hard x-ray photoemission spectroscopy. The experimental results establish that the cleaving of YBa2Cu3O6+x compounds occurs predominantly in the BaCuO3 complex leading to charged surfaces at higher x and to uncharged surfaces at lower x values. The bulk component of the core level spectra exhibits a shift in binding energy as a function of x, from which a shift of the chemical potential as a function of hole concentration in the CuO2 layers could be derived. The doping dependence of the chemical potential across the transition from a Mott-Hubbard insulator to a Fermi-liquid-like metal is very different in these two series of compounds. In agreement with previous studies in the literature the chemical potential shift in La2-xSrxCuO4 is close to zero for small hole concentrations.…
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