Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances

TL;DR

This study demonstrates that chemical doping in graphene nanoribbons induces significant mobility gaps due to impurity-related quasibound states, offering a promising route to enhance graphene device performance.

Contribution

First-principles analysis revealing how chemical doping creates large mobility gaps in graphene nanoribbons, enabling scalable device improvements.

Findings

Mobility gaps up to 1 eV caused by boron impurities

Strong electron-hole asymmetrical backscattering observed

Potential for scalable fabrication of doped graphene devices

Abstract

We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically-doped graphene nanoribbons with sizes within the reach of conventional lithography.