Interlayer magnetoresistance in an anisotropic pseudogap state
M. F. Smith, Ross H. McKenzie

TL;DR
This paper calculates how interlayer magnetoresistance in a layered metal with a d-wave pseudogap depends on magnetic field, temperature, and scattering, proposing a method to characterize pseudogaps via resistance measurements.
Contribution
It provides a semiclassical expression for interlayer resistivity considering anisotropic pseudogaps, linking resistance behavior to pseudogap properties and magnetic field orientation.
Findings
Pseudogap smooths the field direction dependence of resistance.
Resistance measurements can characterize anisotropic pseudogaps.
Model applied to overdoped T$ ext{l}$2201 with magnetic field parallel to layers.
Abstract
The interlayer magnetoresistance of a quasi-two-dimensional layered metal with a d-wave pseudogap is calculated semiclassically. An expression for the interlayer resistivity as a function of the strength and direction of the magnetic field, the magnitude of the pseudogap, temperature, and scattering rate is obtained. We find that the pseudogap, by introducing low-energy nodal quasiparticle contours, smooths the dependence on field direction in a manner characteristic of its anisotropy. We thus propose that interlayer resistance measurements under a strong field of variable orientation can be used to fully characterize an anisotropic pseudogap. The general result is applied to the case of a magnetic field parallel to the conducting layers using a model band structure appropriate for overdoped T2201.
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Taxonomy
TopicsSurface and Thin Film Phenomena · Magnetic properties of thin films · Graphene research and applications
