Electronic Radio-Frequency Refrigerator
S. Kafanov, A. Kemppinen, Yu. A. Pashkin, M. Meschke, J. S. Tsai and, J.P. Pekola

TL;DR
This paper demonstrates an experimental method to refrigerate a hybrid single-electron transistor using an RF gate voltage, with in-situ temperature measurement via induced dc current.
Contribution
It introduces a novel refrigeration technique for hybrid single-electron transistors driven by RF gate voltage, with real-time temperature monitoring.
Findings
Successful refrigeration of the device demonstrated
In-situ temperature measurement achieved via dc current
Potential for improved nanoscale cooling applications
Abstract
We demonstrate experimentally that a hybrid single-electron transistor with superconducting leads and a normal-metal island can be refrigerated by an alternating voltage applied to the gate electrode. The simultaneous measurement of the dc current induced by the rf gate through the device at a small bias voltage serves as an in-situ thermometer.
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