Electronic Radio-Frequency Refrigerator

TL;DR

This paper demonstrates an experimental method to refrigerate a hybrid single-electron transistor using an RF gate voltage, with in-situ temperature measurement via induced dc current.

Contribution

It introduces a novel refrigeration technique for hybrid single-electron transistors driven by RF gate voltage, with real-time temperature monitoring.

Findings

Successful refrigeration of the device demonstrated

In-situ temperature measurement achieved via dc current

Potential for improved nanoscale cooling applications

Abstract

We demonstrate experimentally that a hybrid single-electron transistor with superconducting leads and a normal-metal island can be refrigerated by an alternating voltage applied to the gate electrode. The simultaneous measurement of the dc current induced by the rf gate through the device at a small bias voltage serves as an in-situ thermometer.