Current-voltage characteristics of tunable ferromagnet-silicon-ferromagnet channels in the spin blockade regime
D.V. Khomitsky

TL;DR
This paper analyzes the current-voltage behavior of tunable ferromagnet-silicon-ferromagnet channels under spin blockade, revealing how polarization differences control current amplitude for potential magnetic manipulation in semiconductor devices.
Contribution
It generalizes a previous model to include tunable polarizations and derives an analytical expression for the critical current dependence on polarizations.
Findings
Current amplitude can be tuned by polarization differences.
Magnetic manipulation of current is possible in various semiconductor channels.
Analytical dependence of critical current on polarizations is established.
Abstract
The steady current-voltage characteristics of ferromagnet-silicon-ferromagnet channels with tunable emitter and collector polarizations are investigated in the presence of spin blockade generalizing the model developed by Pershin Yu V and Di Ventra M (2008 {\it Phys. Rev.} B {\bf 77} 073301). The dependence of the critical current on both collector and emitter polarizations is obtained analytically. It is found that the current amplitude in the channel can be effectively tuned by varying the difference between the collector and emitter ferromagnet polarizations which allows to perform the magnetic manipulation of the electrical current in wide class of both n- and p-doped, low- and high-Ohmic semiconductor channels coupled to ferromagnetic leads.
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Quantum and electron transport phenomena · Semiconductor materials and devices
