Phase study of oscillatory resistances in microwave-irradiated- and dark- GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
R. G. Mani, W. B. Johnson, V. Umansky, V. Narayanamurti, and K. Ploog

TL;DR
This study explores oscillatory resistances in GaAs/AlGaAs devices under microwave irradiation and darkness, revealing a new class of integral quantum Hall effect characterized by unique phase relations and radiation-induced phenomena.
Contribution
It uncovers a novel class of IQHE with anti-phase oscillations and details the effects of microwave photo-excitation on quantum Hall states in high mobility samples.
Findings
Identification of distinct phase relations in resistances at large filling factors
Observation of quantum Hall plateaus in anti-phase oscillation regimes
Radiation-induced non-monotonic variations in SdH oscillations and Hall plateau widths
Abstract
We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, . At large-, the dark study indicates several distinct phase relations ("Type-1", "Type-2", and "Type-3") between the oscillatory diagonal- and Hall- resistances, as the canonical Integral Quantum Hall Effect (IQHE) is manifested in the "Type-1" case of approximately orthogonal diagonal- and Hall resistance- oscillations. Surprisingly, the investigation indicates quantum Hall plateaus also in the "Type-3" case characterized by approximately "anti-phase" Hall- and diagonal- resistance oscillations, suggesting a new class of IQHE. Transport studies under microwave photo-excitation exhibit radiation-induced magneto-resistance oscillations in both the diagonal, , and off-diagonal, , resistances. Further, when the…
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