Tunneling anisotropic magnetoresistance in organic spin valves

TL;DR

This paper reports the discovery of tunneling anisotropic magnetoresistance (TAMR) in an organic spin valve with a single ferromagnetic electrode, using a high mobility organic semiconductor, revealing new spintronic effects.

Contribution

It demonstrates TAMR in an organic spin valve with only one ferromagnetic contact, expanding understanding of spin transport in organic materials.

Findings

Observation of TAMR in organic spin valves

Clear spin-valve signal with two-step switching pattern

TAMR effect originates from tunneling injection from LSMO contact

Abstract

We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic semiconductor. The effect originates from the tunneling injection from the LSMO contact and can thus occur even for organic layers which are too thick to support the assumption of tunneling through the layer. Magnetoresistance measurements show a clear spin-valve signal, with the typical two step switching pattern caused by the magnetocrystalline anisotropy of the epitaxial magnetic electrode.