Ultra-low noise field-effect transistor from multilayer graphene

TL;DR

This paper investigates low-frequency noise in graphene field-effect transistors with different layer counts, revealing distinct behaviors linked to electric field effects on band structure, aiding in layer identification.

Contribution

It introduces a transport-based method to distinguish single-layer from multilayer graphene devices through noise behavior analysis.

Findings

Single-layer graphene noise decreases with carrier density.

Multilayer graphene noise is suppressed by over two orders of magnitude.

Distinct noise behaviors enable layer identification.

Abstract

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers.