Precision Cutting and Patterning of Graphene with Helium Ions

TL;DR

This paper demonstrates a fast, resist-free method for nanoscale patterning of graphene using helium ion microscopy, achieving precise edges and minimal damage at ~15 nm resolution.

Contribution

It introduces a helium ion lithography technique for direct, resist-free graphene patterning with high precision and minimal damage, suitable for scalable nanofabrication.

Findings

Achieved ~15 nm feature sizes in graphene patterning.

Produced sharp edges with minimal damage or doping.

Demonstrated fast, resist-free lithography process.

Abstract

We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with ~15 nm feature sizes.