Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

TL;DR

This paper presents the development of nano-scale double-gated transistors for detailed study of electron states and transport in single phosphorus donors in silicon, revealing charge state transitions and key electronic properties.

Contribution

It introduces a novel device platform enabling precise control and measurement of single donor electron states in silicon nanostructures.

Findings

Resolved charge state transitions of single phosphorus donors.

Measured charging energies and g-factors consistent with theoretical expectations.

Demonstrated control over donor electron states in nanoscale transistors.

Abstract

We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.