Catalyst-free selective area growth of InN nanocolumns by MBE

TL;DR

This paper demonstrates a method for growing InN nanorods selectively using plasma-assisted MBE without catalysts, employing molybdenum masks at low temperatures to achieve precise nanostructure arrays.

Contribution

It introduces a catalyst-free, selective area growth technique for InN nanorods using molybdenum masks in plasma-assisted MBE at low temperatures.

Findings

Successful growth of InN nanorods on Si(111)

Use of molybdenum as an effective mask material

Patterned nanorod arrays with holes smaller than 60 nm

Abstract

Selective area growth of InN nanorods by plasma assisted molecular beam epitaxy is demonstrated. Molybdenum is found to be a suitable mask material at the low substrate temperature of 475 C needed for the growth of InN nanocolumns. The growth of arrays of single nanorods on a Si(111) substrate has been achieved with a thin molybdenum mask lithographically patterned with holes smaller than 60 nm.