Current-Voltage Characteristics of Graphane p-n Junctions

TL;DR

This paper analyzes the current-voltage behavior of p-n junctions in graphane, a hydrogenated form of graphene with a bandgap, demonstrating that ideal I-V characteristics can be achieved in 2D p-n junctions.

Contribution

It provides the first basic theoretical analysis of 2D graphane p-n junctions, showing they follow Shockley's law similar to traditional semiconductors.

Findings

Ideal I-V characteristics are expected for graphane p-n junctions.

The analysis confirms the applicability of Shockley's law to 2D graphane junctions.

Feasibility of small reverse currents in doped graphane p-n junctions.

Abstract

In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and n regions can be defined so that 2D p-n junctions become feasible with small reverse currents. This paper introduces a basic analysis to obtain current-voltage characteristics of such a 2D p-n junction based on graphane. As we show, within the approximation of Shockley law of junctions, an ideal I-V charactristic for this p-n junction is to be expected.