Insulator to semi-metal transition in graphene oxide

TL;DR

This paper investigates how the electronic transport properties of graphene oxide change with reduction, showing a transition from insulator to semi-metal and detailing the mechanisms involved.

Contribution

It provides a detailed analysis of the insulator to semi-metal transition in graphene oxide during reduction, highlighting the evolution of transport gaps and conduction mechanisms.

Findings

Transport gap decreases from 10 to 50 meV to near zero with reduction.

Transport occurs via variable-range hopping in reduced GO.

More reduction increases available hopping sites.

Abstract

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.