Theoretical Study of Atomic Structure and Elastic Properties of Branched Silicon Nanowires

TL;DR

This paper provides a theoretical analysis of the atomic structure and elastic properties of Y-shaped silicon nanowire junctions, calculating their Young's modulus and examining bond formation during bending.

Contribution

It introduces a theoretical study of Y-silicon nanowire junctions, including calculations of elastic properties and bond formation, which was not previously explored.

Findings

Young's modulus of Y-silicon nanowires comparable to carbon nanotube Y-junctions

Bond formation occurs during the final stages of bending

Elastic properties depend on nanowire geometry and junction type

Abstract

The atomic structure and elastic properties of Y-silicon nanowire junctions of fork- and bough-types were theoretically studied and effective Young modulus were calculated using the Tersoff interatomic potential. In the final stages of bending, new bonds between different parts of the Y-shaped wires are formed. It was found that the stiffness of the nanowires considered can be compared with the stiffness of carbon nanotube Y-junctions.