New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures

TL;DR

This paper investigates how resonant tunnelling structures within Schottky barriers can produce sharp nonlinear current-voltage characteristics, highlighting the coherent tunnelling processes and their potential for novel electronic device functionalities.

Contribution

It demonstrates the ability to achieve steep nonlinear I-V characteristics in semiconductor structures with resonant tunnelling within Schottky barriers, revealing new control mechanisms.

Findings

Schottky barriers can modulate resonant tunnelling current effectively.

Coherent tunnelling processes are observed in the structures.

Sharp nonlinear I-V characteristics are demonstrated on both branches.

Abstract

Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunnelling current effectively. Tunnelling processes do reveal the coherent character. Sharp nonlinear current-voltage characteristics are observed on both of the forward and the reverse branches.