Magnetic and transport properties of n-type Fe-doped In2O3 ferromagnetic thin films

TL;DR

This study investigates the magnetic and transport properties of Fe-doped In2O3 thin films, revealing room temperature ferromagnetism linked to Fe site occupancy and carrier density, with implications for spintronic applications.

Contribution

It demonstrates that Fe atoms occupy In sites in In2O3 and that ferromagnetism is intrinsic and carrier-dependent, advancing understanding of magnetic doping in transparent oxides.

Findings

Room temperature ferromagnetism observed in Fe-doped In2O3 films

Fe occupies In sites without forming metallic Fe phases

Magnetic moments depend on carrier density and Fe valence state

Abstract

Room temperature ferromagnetism was observed in n-type Fe-doped In2O3 thin films deposited on c-cut sapphire substrates by pulsed laser deposition. Structure, magnetism, composition, and transport studies indicated that Fe occupied the In sites of the In2O3 lattice rather than formed any metallic Fe or other magnetic impurity phases. Magnetic moments of films were proved to be intrinsic and showed to have a strong dependence on the carrier densities which depended on the Fe concentration and its valance state as well as oxygen pressure.