Hysteretic magnetoresistance in polymeric diodes
Sayani Majumdar, Himadri S. Majumdar, Harri Aarnio, Ronald, Osterbacka
TL;DR
This paper investigates hysteretic organic magnetoresistance in polymeric diodes, revealing its dependence on measurement conditions and material properties, and suggesting trapped carriers influence the magnetic response.
Contribution
It demonstrates the universal presence of hysteretic OMAR in various polymers and links the phenomenon to trapped carriers affecting spin relaxation.
Findings
OMAR magnitude and shape depend on scan speed and measurement delay
Hysteretic OMAR is universal across different polymer diodes
Polymer type influences OMAR width and magnitude
Abstract
We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depends strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time-dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior are trapped carriers, which in presence of a magnetic field changes the ferromagnetic ground-state of the polymer leading to long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon.
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