Dynamical Humidity Sensing Characterization of LiNbO3 Film and Porous Si based Structures

TL;DR

This study investigates how rapid humidity fluctuations affect the electrical properties of LiNbO3 film and porous silicon structures, demonstrating the effectiveness of dynamic electrophysical methods for high-speed humidity sensing applications.

Contribution

It introduces a novel application of dynamic electrophysical characterization techniques to analyze humidity-induced changes in specific semiconductor structures.

Findings

Current-voltage and transient current curves are characteristic of poling in space charge regions.

Dynamic methods effectively capture fast humidity change effects.

Results support high-speed humidity sensor development.

Abstract

The results of the investigation of impact of pulse humidity changes on the parameters of dynamic current-voltage loops and charge-voltage loops, and also dynamic transient currents for Pt/LiNbO3-film/Pt:Ti/SiO2/Si and porous Si/Si structures are presented. The peculiarities of current-voltage loops and transient currents curves are characteristic for poling processes in the space charge region similar to that observed in the case of ionic semiconductors. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of various under fast humidity changes was demonstrated. The results are considered from the standpoint of applications in high-speed humidity sensing.