The reversibility of the Goos-H\"anchen shift near the band-crossing structure of one-dimemsional photonic crystals containing left-handed metamaterials

TL;DR

This paper theoretically investigates the Goos-H"anchen shift in one-dimensional photonic crystals with left-handed metamaterials, revealing a reversible shift behavior near the band-crossing structure influenced by incident angle and frequency.

Contribution

It uncovers the reversible nature of the GH shift near the band-crossing point in 1D photonic crystals containing LHMs, a novel phenomenon not previously described.

Findings

GH shift changes from negative to positive above BCP

GH shift reverses below BCP frequency

Reversible shift explained by phase properties of band-crossing structure

Abstract

We perform a theoretical investigation on the Goos-H\"achen (GH) shift in one-dimensional photonic crystals (1DPCs) containing left-handed metamaterials (LHMs). We find an unusal effect of the GH shift near the photonic band-crossing structure, which is located at the condition, $% -k_{z}^{(A)}d_{A}=k_{z}^{(B)}d_{B}=m\pi $ $(m=1,2,3...)$, under the inclined incident angle, here A denotes the LHM layer and B denotes the dielectric layer. Above the frequency of the band-crossing point (BCP), the GH shift changes from negative to positive as the incident angle increases, while the GH shift changes reversely below the BCP frequency. This effect is explained in terms of the phase property of the band-crossing structure.