Double-gated graphene-based devices

TL;DR

This paper explores the electrical transport properties of double gated graphene devices, focusing on fabrication techniques and the effects of electric fields on their energy band structure, with insights into dielectric breakdown behavior.

Contribution

It introduces a fabrication process for top gated graphene devices using electron-gun evaporated SiO₂ and analyzes the dielectric breakdown properties of these films.

Findings

Electron-gun evaporated SiO₂ has a breakdown field comparable to thermally grown oxide.

High breakdown fields are achievable if SiO₂ is metallized immediately after deposition.

The study provides insights into the fabrication and reliability of graphene-based electronic devices.

Abstract

We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few layer graphene systems. Here we discuss technological details that are important for the fabrication of top gated structures, based on electron-gun evaporation of SiO$_2$. We perform a statistical study that demonstrates how --contrary to expectations-- the breakdown field of electron-gun evaporated thin SiO$_2$ films is comparable to that of thermally grown oxide layers. We find that a high breakdown field can be achieved in evaporated SiO$_2$ only if the oxide deposition is directly followed by the metallization of the top electrodes, without exposure to air of the SiO$_2$ layer.