Electrical Spin Injection into Silicon using MgO Tunnel Barrier

TL;DR

This paper demonstrates successful electrical spin injection into silicon using an Fe/MgO tunnel barrier, achieving high-temperature operation and providing insights into spin transport properties.

Contribution

It reports the first observation of spin injection into silicon through MgO tunnel barrier with non-local magnetoresistance measurements up to 120K.

Findings

Spin injection signals observed up to 120K

Spin diffusion length estimated at 2.25 micrometers at 8K

MgO tunnel barrier effectively facilitates spin injection into silicon

Abstract

We observed spin injection into silicon through Fe/MgO tunnel barrier by using non-local magnetoresistance measurement technique. Fe/MgO tunnel barrier contacts with a lateral spin valve structure were fabricated on phosphorous doped silicon-on-insulator substrate. Spin injection signals in the non-local scheme were observed up to 120K, which is the highest value where band transferred spins in Si have ever been reported, and spin diffusion length was estimated to be about 2.25um at 8K. Temperature dependence and injection current dependence of the non-local voltage were also investigated. It is clarified that MgO tunnel barrier is effective for the spin injection into silicon.