Electronic transport properties of a tilted graphene pn junction

TL;DR

This paper demonstrates through numerical simulations that a tilted graphene pn junction can induce a pseudo-Hall effect, with controllable strength via tilt angle and transition length, and proposes a device for experimental observation.

Contribution

It introduces the concept of a pseudo-Hall effect in tilted graphene pn junctions and provides a classical ray analysis explanation, along with a proposed device for experimental validation.

Findings

Pseudo-Hall effect observed in simulations

Tilt angle and transition length control effect strength

Proposed a three-terminal device for experiments

Abstract

Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along one of the sides of a graphene ribbon) can be observed under these conditions. The tilt angle and the pn transition length are two key parameters in tuning the strength of this effect. This phenomenon can be explained using classical trajectory via ray analysis, and is therefore relatively robust against disorder. Lastly, we propose and simulate a three terminal device that allows direct experimental access to the proposed effect.