Room-temperature ferromagnetism in dielectric GaN(Gd)

TL;DR

This paper explains the observed room-temperature ferromagnetism in Gd-doped GaN using a polarization exchange mechanism, aligning theoretical calculations with experimental results.

Contribution

It introduces a polarization exchange interaction model to explain ferromagnetism in Gd-doped GaN at room temperature.

Findings

Calculated critical temperature matches experimental data

Magnetic moments are consistent with observations

Gd d-levels near the valence band facilitate ferromagnetism

Abstract

We present an explanation of recently observed giant magnetic moment and room-temperature ferromagnetism in the dielectric GaN doped with Gd. Our approach uses the polarization mechanism of exchange interaction, which occurs if the d-level of Gd appears in the bandgap close to the valence band edge. Calculated ferromagnetic critical temperature and the value of the magnetic moment well correspond to experimental findings.