Critical issues in the formation of quantum computer test structures by ion implantation

TL;DR

This paper reviews ion implantation techniques for creating quantum test structures in silicon, focusing on dopant behavior, segregation, and diffusion, which are crucial for developing single atom devices and spin readout mechanisms.

Contribution

It provides new insights into dopant segregation, diffusion behaviors, and the effects of ion charge states during implantation in silicon for quantum device fabrication.

Findings

Phosphorus and bismuth segregate to SiO2/Si interface during annealing.

Antimony diffusion remains minimal during processing.

Ion charge state influences the range of antimony ions in silicon.

Abstract

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed.