Comparison of EIT schemes in semiconductor quantum dot structures: Impact of many-body interactions
J. Houmark, T. R. Nielsen, J. Mork, A.-P. Jauho

TL;DR
This study compares three EIT schemes in semiconductor quantum dots, revealing that many-body interactions significantly influence slow light effects and can reduce required coupling power, with V schemes being most advantageous.
Contribution
It provides a comparative analysis of EIT schemes in quantum dots, highlighting the impact of many-body interactions on slow light and identifying the V scheme as most favorable.
Findings
Many-body interactions significantly affect slow light properties.
Many-body interactions reduce the coupling power needed for EIT.
V schemes are generally preferable due to carrier redistribution.
Abstract
We investigate the impact of many-body interactions on group-velocity slowdown achieved via electromagnetically induced transparency in quantum dots using three different coupling-probe schemes (ladder, V, and Lambda, respectively). We find that for all schemes many-body interactions have an important impact on the slow light properties. In the case of the Lambda and V schemes, the minimum required coupling power to achieve slow light is significantly reduced by many-body interactions. V type schemes are found to be generally preferable due to a favorable redistribution of carriers in energy space.
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