Organic molecular thin films for nanoscale information memory applications

TL;DR

This paper reviews recent advances in molecular electronics for nanoscale information memory, focusing on redox dendrimeric films and self-assembled monolayers, highlighting their potential for future high-density data storage solutions.

Contribution

It provides a comprehensive overview of molecular systems for nanoscale memory, emphasizing promising candidates and discussing challenges in bridging molecular devices with current digital systems.

Findings

Redox dendrimeric thin films and self-assembled monolayers are promising for nanoscale memory.

Single-molecule memory devices can achieve sub-10 nm features.

Multimode storage offers potential for high-capacity data storage.

Abstract

According to Moore law, the silicon semiconductor transistor based information system is facing its physical limitations due to fluctuations of random charge and leakage current. Molecular electronics is becoming more and more attractive owing to the advantages of easy molecular structure variability, flexibility, low-cost and compatibility with bioelectronics. In this handbook chapter, we reviewed the recent research progress of molecular electronics, especially the studies on nanoscale information memories, from the viewpoints of structure-property relationship. Two kinds of molecular systems including redox dendrimeric thin films and self-assembled molecular monolayers are discussed in detail. The investigation and application of other molecular thin films such as polymers, charge transfer salts and Langmuir-Blodgett layers are also briefly introduced. We suggest that two promising molecular systems have the most potentials for using as building blocks in nanoscale information storage. One is single-molecule-based memory device with sub-10 nm characteristics built on self-assembled monolayer. Multimode information storage is the other powerful way to make breakthrough in the challenging area of nanoscale data storage. This relies on further experimental and theoretical advances. Moreover, a big foreseeable obstacle is how to bridge the big gap between such novel system and the current bit world.