Tailoring exchange bias in half-metallic La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films for spin-valve applications

TL;DR

This study demonstrates how to engineer exchange bias in epitaxial thin films of half-metallic manganites to improve spin-valve device performance, by utilizing antiferromagnetic coupling and interface design.

Contribution

The paper introduces a method to tailor exchange bias in LaSrMnO films for enhanced spin-valve applications, combining antiferromagnetic and ferromagnetic manganites in epitaxial structures.

Findings

Achieved a robust exchange bias shift of magnetization hysteresis at 10 K.

Interfacial exchange energy J approximately 0.13 erg/cm².

Enhanced coercivity and coercivity contrast in magnetic tunnel junctions.

Abstract

We have utilized the antiferromagnetic nature and structural/chemical compatibility of La$_{0.45}$Sr$_{0.55}$MnO$_{3}$ with highly spin polarized La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ to prepare epitaxial exchange bias couples. A robust exchange bias (EB) shift of magnetization hysteresis with associated interfacial exchange energy J $\approx$ 0.13 erg/cm$^2$ at 10 K along with enhanced coercivity are reported. The EB effect was engineered to bring coercivity contrast between La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and cobalt films in La$_{0.45}$Sr$_{0.55}$MnO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/SrTiO$_{3}$/Co magnetic tunnel junctions.