Auger recombination rates in nitrides from first principles

TL;DR

This paper calculates Auger recombination rates in InGaN using first-principles methods, revealing its significant role as a non-radiative loss mechanism in light emitters, especially at high carrier densities.

Contribution

It provides the first-principles calculation of Auger recombination rates in nitrides, analyzing both inter- and intra-band mechanisms across the emission spectrum.

Findings

Auger coefficient can reach 2x10^-30cm^6s^-1 in blue-green spectrum

Auger recombination significantly impacts quantum efficiency in InGaN emitters

Recombination rates increase with carrier concentration, affecting device performance

Abstract

We report Auger recombination rates for wurtzite InGaN calculated from first principles density-functional and many-body-perturbation theory. Two different mechanisms are examined -- inter- and intra-band recombination -- that affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient can be as large as 2x10^-30cm^6s^-1; in the infrared even larger. Since Auger recombination scales with the cubic power of the free-carrier concentration it becomes an important non-radiative loss mechanism at high current densities. Our results indicate that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters.