Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

TL;DR

This paper introduces a cryogenic high-bandwidth measurement system for silicon single-electron transistors, enabling faster quantum state observations and analyzing measurement impacts on electron heating and noise.

Contribution

It presents a novel cryogenic instrumentation approach that surpasses traditional methods in speed and efficiency for single-electron transistor measurements.

Findings

Successful implementation of single-shot quantum state measurement

Faster measurement capabilities at cryogenic temperatures

Analysis of electron heating and noise effects

Abstract

We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully implemented and used to observe the real time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analysed.