Integrated complementary graphene inverter

TL;DR

This paper demonstrates a graphene-based digital inverter with integrated p- and n-type transistors on a single sheet, showing potential for future graphene digital circuits.

Contribution

It introduces a novel integrated graphene inverter with electrically tuned transistor types, advancing graphene digital logic technology.

Findings

Successful integration of p- and n-type graphene transistors

Electrical annealing used to invert transistor type

Achieved Boolean inversion with Dirac point operation

Abstract

The operation of a digital logic inverter consisting of one p- and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. The type of one of the transistors was inverted by moving its Dirac point to lower gate voltages via selective electrical annealing. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step towards the development of digital integrated circuits on graphene.