Enhancement of the superconducting critical temperature in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ by controlling disorder outside CuO$_2$ planes

TL;DR

This study shows that controlling disorder outside CuO$_2$ planes, especially at Sr sites, can enhance the superconducting critical temperature in Bi2212, with reduced disorder leading to higher $T_c$ and lower residual resistivity.

Contribution

It demonstrates that disorder at Sr sites outside CuO$_2$ planes significantly affects $T_c$, and reducing Bi atom occupancy at these sites increases $T_c$ to a record 98K.

Findings

Sr-site disorder reduces $T_c$ and residual resistivity.

Increasing the number of CuO$_2$ planes decreases disorder effects.

Achieved a record $T_c$ of 98K by minimizing Bi occupancy at Sr sites.

Abstract

We investigate the effect of disorder at various lattice sites outside the CuO$_2$ plane on the superconducting critical temperature $T_c$ of the cuprate superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212). The most effective disorder turns out to be that at the Sr site in the neighboring blocks, which contain apical-oxygen atoms. The Sr-site disorder reduces $T_c$ and also produces a residual component ($\rho_0$) in the in-plane resistivity, the magnitude of which is found to be proportional to the magnitude of $T_c$ reduction. We demonstrate that both $T_c$-degradation rate and $\rho_0$ decrease as the number of the CuO$_2$ planes increases in the unit cell, that is, as the number of the neighboring SrO blocks decreases. In real crystals of Bi-based cuprates, main source of disorder is Bi atoms randomly occupying the Sr sites. We have succeeded in reducing the Bi content at Sr-sites as much as possible and achieved $T_c$=98K, a high-$T_c$ record in Bi2212.