One-dimensional Weak Localization of Electrons in a Single InAs Nanowire

TL;DR

This study investigates electron transport in a single InAs nanowire at low temperatures, confirming 1D weak localization behavior and how it is affected by magnetic fields, temperature, and electron density.

Contribution

It provides experimental evidence of 1D weak localization in InAs nanowires and analyzes how phase coherence length varies with temperature and electron density.

Findings

Phase coherence length is tens of nanometers with T^{-1/3} dependence.

Magneto-conductance aligns with 1D weak localization theory.

Increased electron density may suppress weak localization effects.

Abstract

We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are consistent with the functional forms predicted in one-dimensional (1D) weak localization theory. By fitting the magneto-conductance data to theory, the phase coherence length of electrons is determined to be tens of nanometers with a T-1/3 dependence. Moreover, as the electron density is increased by a gate voltage, the magneto-conductance shows a possible signature of suppression of weak localization in multiple 1D subbands.