Organic film thickness influence on the bias stress instability in Sexithiophene Field Effect Transistors

TL;DR

This study investigates how the thickness of organic films in Sexithiophene FETs affects bias stress instability, revealing a correlation with structural properties but not with mobility.

Contribution

It provides new insights into the relationship between film thickness, structural properties, and bias stress in Sexithiophene FETs.

Findings

Bias stress parameters correlate with film thickness and structure.

Mobility remains nearly unaffected by film thickness.

Structural analysis links film properties to device stability.

Abstract

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2 substrates. After the T6 film structural analysis by X-Ray diffraction and the FET electrical investigation focused on carrier mobility evaluation, bias stress instability parameters have been estimated and discussed in the context of existing models. By increasing the film thickness, a clear correlation between the stress parameters and the structural properties of the organic layer has been highlighted. Conversely, the mobility values result almost thickness independent.