Quasiparticle Transformation During a Metal-Insulator Transition in Graphene
Aaron Bostwick, Jessica L. McChesney, Konstantin Emtsev, Thomas, Seyller, Karsten Horn, Stephan D. Kevan, and Eli Rotenberg

TL;DR
This study demonstrates a metal-insulator transition in hydrogen-dosed graphene on SiC(0001), characterized by increased resistance and spectral anomalies, indicating a transition to a localized electronic state.
Contribution
It provides direct experimental evidence of a metal-insulator transition in graphene induced by atomic hydrogen, revealing quasiparticle breakdown and non-Fermi liquid behavior.
Findings
Resistance increases by about 4 orders of magnitude.
Spectral function shows non-Fermi Liquid behavior.
Evidence suggests transition to a localized ground state.
Abstract
Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi Liquid behaviour and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.
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Taxonomy
TopicsGraphene research and applications · Surface and Thin Film Phenomena · Silicon Carbide Semiconductor Technologies
