Nonvolatile memory effects in hybrid devices of few-layer graphene and ferroelectric polymer films

TL;DR

This paper demonstrates nonvolatile memory effects in hybrid devices combining few-layer graphene with ferroelectric polymer films, showing stable resistance changes due to ferroelectric polarization.

Contribution

It introduces a novel hybrid device structure with stable nonvolatile memory functionality based on ferroelectric polymer and graphene integration.

Findings

Stable resistance changes under floating conditions

Memory effect dependent on prior back gate voltage

Remanent electric field causes nonvolatile behavior

Abstract

We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance changes were observed under floating conditions, which were dependent on the back gate voltage applied beforehand. Nonvolatile memory functionality in the hybrid FLG-P(VDF/TrFE) devices is attributed to a remanent electric field induced by the ferroelectric polarization of the P(VDF/TrFE) layer.