Gate-controlled non-volatile graphene-ferroelectric memory

TL;DR

This paper demonstrates a non-volatile graphene-based memory device using ferroelectric gating, achieving significant resistance change by controlling ferroelectric polarization, with potential applications in memory technology.

Contribution

It introduces a novel graphene-ferroelectric hybrid memory device with non-volatile resistance switching controlled by ferroelectric polarization.

Findings

Resistance change exceeds 200% in the device

Binary states are represented by high and low resistance

Electrostatic doping explains the resistance modulation

Abstract

In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A non-volatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface.