Factors influencing graphene growth on metal surfaces
E. Loginova, N. C. Bartelt, P. J. Feibelman, K. F. McCarty

TL;DR
This study investigates the mechanisms of graphene growth on Ru(0001) and Ir(111) surfaces, revealing that cluster addition at the edges governs growth and that substrate orientation influences growth dynamics and nucleation behavior.
Contribution
It demonstrates that graphene growth proceeds via cluster addition at edges and shows how substrate orientation affects growth rates and nucleation, expanding understanding beyond elemental carbon deposition.
Findings
Growth velocity depends nonlinearly on adatom concentration.
Rotated nuclei grow faster than initial nuclei.
Substrate orientation influences nucleation and growth dynamics.
Abstract
Graphene forms from a relatively dense, tightly-bound C-adatom gas, when elemental C is deposited on or segregates to the Ru(0001) surface. Nonlinearity of the graphene growth rate with C adatom density suggests that growth proceeds by addition of C atom clusters to the graphene edge. The generality of this picture has now been studied by use of low-energy electron microscopy (LEEM) to observe graphene formation when Ru(0001) and Ir(111) surfaces are exposed to ethylene. The finding that graphene growth velocities and nucleation rates on Ru have precisely the same dependence on adatom concentration as for elemental C deposition implies that hydrocarbon decomposition only affects graphene growth through the rate of adatom formation; for ethylene, that rate decreases with increasing adatom concentration and graphene coverage. Initially, graphene growth on Ir(111) is like that on Ru: the…
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