Hall Coefficient of Dirac Fermions in Graphene under Charged Impurity Scatterings

TL;DR

This paper investigates the Hall coefficient of Dirac fermions in graphene affected by charged impurities, using a conserving formalism and self-consistent Born approximation, and finds good agreement with experimental data.

Contribution

It introduces a theoretical approach to accurately calculate the Hall coefficient in graphene with charged impurities, aligning well with experimental results.

Findings

Calculated Hall coefficient matches experimental data

Electric conductivity results agree with measurements

The formalism effectively models impurity effects in graphene

Abstract

With a conserving formalism within the self-consistent Born approximation, we study the Hall conductivity of Dirac fermions in graphene under charged impurity scatterings. The calculated inverse Hall coefficient is compared with the experimental data. It is shown that the present calculations for the Hall coefficient and the electric conductivity are in good agreement with the experimental measurements.