Independently switchable atomic quantum transistors by reversible contact reconstruction
F.-Q. Xie, R. Maul, A. Augenstein, Ch. Obermair, E.B. Starikov, G., Schoen, Th. Schimmel, W. Wenzel

TL;DR
This paper introduces a novel atomic-scale three-terminal transistor that operates via reversible contact reconstruction, enabling independent switching at room temperature with potential applications in quantum electronics.
Contribution
It presents a new switching mechanism based on bistable, self-stabilizing electrode reconstruction, demonstrated through experiments and atomistic simulations.
Findings
Operates at room temperature with low voltage
Achieves quantized conductance of 1-5 G_0
Demonstrates independent control of two transistors
Abstract
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G_0 in experiment and atomistic simulation. Atomistic modeling of structural and conductance properties elucidates bistable electrode reconstruction as the underlying mechanism of the device. Independent room-temperature operation of two transistors at low voltage demonstrates intriguing perspectives for quantum…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Electronic and Structural Properties of Oxides · Quantum and electron transport phenomena
