CMOS Pixel Sensor Response to Low Energy Electrons in Transmission Electron Microscopy

TL;DR

This study evaluates a CMOS sensor's response to low energy electrons in transmission electron microscopy, measuring its spatial resolution and validating results with simulations.

Contribution

It provides experimental measurements of CMOS sensor response to 80 keV and 100 keV electrons, confirming simulation predictions and demonstrating suitability for electron microscopy.

Findings

Point spread function measured at 13.0 microns for 100 keV electrons

Point spread function measured at 12.1 microns for 80 keV electrons

Results align with Geant-4 simulation predictions

Abstract

This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and (12.1 +/- 1.6) microns at 80 keV, for 20 micron pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation.